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KM416RD8AS-RBM80 - 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package

KM416RD8AS-RBM80_2533949.PDF Datasheet


 Full text search : 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package


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PART Description Maker
KM416RD8AS-SCM80 KM416RD8AS KM416RD8AS-RBM80 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
Samsung Electronic
SAMSUNG[Samsung semiconductor]
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K4R271669F 128Mbit RDRAM(F-die)
SAMSUNG SEMICONDUCTOR CO. LTD.
KM418RD16AC KM418RD16AD KM418RD16C KM418RD16D 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung semiconductor
KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位)
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171 256k x 16-Bit Dynamic RAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
SIEMENS AG
MCM6229A-45 MCM6229AWJ20R2 256K X 4 BIT STATIC RANDOM ACCESS MEMORY 256K X 4 STANDARD SRAM, 20 ns, PDSO28
Motorola, Inc.
Motorola Mobility Holdings, Inc.
KM641003A 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
SAMSUNG SEMICONDUCTOR CO. LTD.
 
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